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Pixel-Level Digital-to-Analog Conversion Scheme with Compensation of Thin-Film-Transistor Variations for Compact Integrated Data Drivers of Active Matrix Organic Light Emitting Diodes

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Published 22 March 2011 Copyright (c) 2011 The Japan Society of Applied Physics
, , Citation Tae-Wook Kim et al 2011 Jpn. J. Appl. Phys. 50 03CC02 DOI 10.1143/JJAP.50.03CC02

1347-4065/50/3S/03CC02

Abstract

The previous pixel-level digital-to-analog-conversion (DAC) scheme that implements a part of a DAC in a pixel circuit turned out to be very efficient for reducing the peripheral area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs). However, how the pixel-level DAC can be compatible with the existing pixel circuits including compensation schemes of TFT variations and IR drops on supply rails, which is of primary importance for active matrix organic light emitting diodes (AMOLEDs) is an issue in this scheme, because LTPS TFTs suffer from random variations in their characteristics. In this paper, we show that the pixel-level DAC scheme can be successfully used with the previous compensation schemes by giving two examples of voltage- and current-programming pixels. The previous pixel-level DAC schemes require additional two TFTs and one capacitor, but for these newly proposed pixel circuits, the overhead is no more than two TFTs by utilizing the already existing capacitor. In addition, through a detailed analysis, it has been shown that the pixel-level DAC can be expanded to a 4-bit resolution, or be applied together with 1:2 demultiplexing driving for 6- to 8-in. diagonal XGA AMOLED display panels.

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10.1143/JJAP.50.03CC02