Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate   for Gallium Nitride

Hiroyuki Kinoshita; Shigeki Otani; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki; Jun Suda; Hiroyuki Matsunami

doi:10.1143/JJAP.40.L1280

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Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride

Hiroyuki Kinoshita, Shigeki Otani¹, Satoshi Kamiyama², Hiroshi Amano², Isamu Akasaki², Jun Suda³ and Hiroyuki Matsunami³

Copyright (c) 2001 The Japan Society of Applied Physics
Japanese Journal of Applied Physics, Volume 40, Part 2, Number 12A

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Author affiliations

Kyocera Co., Youkaichi Plant, 1166-6 Nagatanino, Hebimizo-cho, Youkaichi, Shiga 527-8555, Japan

¹ National Institute for Materials Science, Advanced Materials Laboratory, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

² Faculty of Science and Technology, and High-Tech Research Center, Meijo University,

1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

³ Department of Electronic Science and Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

Dates

Received 16 October 2001
Accepted 27 October 2001

Citation

Hiroyuki Kinoshita et al 2001 Jpn. J. Appl. Phys. 40 L1280

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DOI

https://doi.org/10.1143/JJAP.40.L1280

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Abstract

Zirconium diboride (ZrB₂) has a hexagonal crystal structure with an in-plane lattice constant of 3.168 Å, very close to that of GaN (3.189 Å). It is a metalloid compound and a very good electrical conductor, with a resistivity of 4.6 µΩ centerdot cm. We propose ZrB₂ (0001) as an electrically conductive lattice-matched substrate for GaN. Firstly, bulk crystal growth of ZrB₂ using a radio frequency (rf)-heated floating zone (FZ) method is presented. Relatively large crystals ( phiv 10 mm×60 mm) were obtained using this method. The thermal expansion coefficient and thermal conductivity of ZrB₂ were evaluated using this crystal. Characterization of ZrB₂ (0001) mirror-polished substrate was carried out by optical microscopic examination and X-ray diffraction. Finally, the results of heteroepitaxial growth are briefly mentioned.

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