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Dielectric Properties of Crystallization Process from Amorphous Bi4Ti3O12

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Copyright (c) 2001 The Japan Society of Applied Physics
, , Citation Masaaki Takashige Masaaki Takashige et al 2001 Jpn. J. Appl. Phys. 40 5816 DOI 10.1143/JJAP.40.5816

1347-4065/40/9S/5816

Abstract

The dielectric constant of amorphous Bi4Ti3O12 prepared by a rapid quenching method was measured. It was found that the as-quenched sample shows a distinct dielectric anomaly at approximately 600°C. With further heating, the dielectric constant shows an anomalously high value above 750°C. In the sample heated to the 900°C range, the recovery of the ferroelectric Bi4Ti3O12 crystalline phase was confirmed by observing the dielectric anomaly at the Curie point.

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10.1143/JJAP.40.5816