The Effect of Acceleration Voltages on the Preparation of CuInSe₂ Thin Films by Ionized Cluster Beam Technique

Polycrystalline CuInSe₂ thin films were prepared on Mo-coated soda-lime glass substrates by the ionized cluster beam (ICB) technique, in which Cu, In and Se vapors were ionized and accelerated. The dependence of the film properties on acceleration voltage were studied. The substrate temperature was maintained below 350°C. The films were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM), an electron-probe microanalyzer (EPMA) and the Rutherford backscattering spectrometry (RBS). It was found that polycrystalline films with improved grain size and uniformity were obtained when the acceleration voltage exceeded 4 kV, and the acceleration voltage played an important role in the formation of the ternary compound during the crystal growth.