Dependence of the Saturation of Light-Induced Defect Density in a-Si:H on Temperature and Light Intensity

Masao Isomura; Nobuhiro Hata; Sigurd Wagner

doi:10.1143/JJAP.31.3500

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Dependence of the Saturation of Light-Induced Defect Density in a-Si:H on Temperature and Light Intensity

Masao Isomura, Nobuhiro Hata and Sigurd Wagner

Copyright (c) 1992 The Japan Society of Applied Physics
Japanese Journal of Applied Physics, Volume 31, Part 1, Number 11

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Author affiliations

Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA

Dates

Received 11 July 1992
Accepted 19 September 1992

Citation

Masao Isomura et al 1992 Jpn. J. Appl. Phys. 31 3500

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DOI

https://doi.org/10.1143/JJAP.31.3500

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Abstract

We studied the temperature and intensity dependence of the saturated density of light-induced defects (N_sat) in hydrogenated amorphous silicon (a-Si:H), established by high-intensity Kr⁺ laser illumination. The saturation value is insensitive to temperature below about 90°C. Above 90°C, N_sat drops with increasing temperature. This behavior can be explained within the defect pool model by a limited number of defect sites coupled with the concept of defect equilibrium. The experimental data suggest that the tail states do not direcily affect N_sat in device-quality a-Si:H.

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