Abstract
DC dielectric breakdown strength Eb of grain-oriented Bi4Ti3O12 ceramics fabricated by the hot-forging method and the cold-uniaxial pressing method has been studied. In the hot-forging sample with the X-ray orientation factor of 0.84, Eb was about 22 MV/m, when electric field was applied parallel to the pressing axis of the grain-oriented ceramics. On the other hand, Eb was about 16 MV/m, when the field was perpendicular to the pressing axis. It was found that grain orientation is effective in increasing Eb parallel to the pressing axis.