Abstract
Substrate temperature dependence of ZnO film properties such as c-axis orientation and optical transmittance was investigated. When the film bombardment became small at higher gas pressure such as 0.1 Torr, the degree of c-axis orientation of the film was improved at above 350°C, but the grain size of film was not dependent on the substrate temperature. When the film-was bombarded by energetic O- ions and O atoms at lower gas pressures, the film was degraded severely. The recovery of the film properties due to the elevated temperature was small. More defects were likely to be induced in the film at a high substrate temperature such as 350°C under film bombardment by the energetic particles.