Abstract
Pb(Zr, Ti)O3 thin films were grown by photoenhanced chemical vapor deposition (CVD) using Pb(C2H5)4, Zr(O-t-C4H9)4, Ti(O-i-C3H7)4 and O2. Two types of perovskite Pb(Zr, Ti)O3 films (tetragonal films and rhombohedral films) were successfully obtained at 600-635°C by controlling the carrier flow ratio of the Zr source to Ti source. The Zr/Ti flow ratio also affected the growth rate, composition and electrical properties of films. In this study, it was proven that significant increases in both growth rate and Zr/Ti compositional ratio were caused by photoirradiation. Dielectric and ferroelectric properties, switching characteristics and I-V characteristics of the obtained Pb(Zr, Ti)O3 films were also described in detail.