Abstract
Growth of PbTiO3 thin films was carried out by the photo-chemical vapor deposition (photo-CVD) method and by varying the growth parameters of substrate temperature, reaction pressure and UV light irradiation. In order to clarify the effects of these parameters on the thin film growth, a three-way-lay-out factorial experiment was done. In the higher temperature and pressure region the vapor phase reaction is dominant. At lower temperatures and pressures, the reaction on the substrate becomes significant. These tendencies were observed under conditions with and without UV light irradiation. The synthesis of PbTiO3 on Pt/sapphire was assisted by UV light irradiation.