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Preparation of Oxide Thin Films by Laser Ablation

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Copyright (c) 1992 The Japan Society of Applied Physics
, , Citation Masaru Ogasawara et al 1992 Jpn. J. Appl. Phys. 31 2971 DOI 10.1143/JJAP.31.2971

1347-4065/31/9S/2971

Abstract

ZnO and PbZr0.9Ti0.1O3 (PZT) thin films were prepared by laser ablation using a KrF excimer laser. The c-axis-oriented ZnO thin films were successfully grown at substrate temperatures of 180-400°C in Ar and Ar+O2. The deposition rates of the films obtained ranged from 150 to 700 Å/min, and these values were larger than those of films grown by conventional magnetron sputtering. Perovskite-type PZT thin films with a rhombohedral structure were also successfully grown at 680°C. The deposition rates of the films obtained ranged from 40 to 240 Å/min, and these values were also larger than those of films grown by magnetron sputtering.

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10.1143/JJAP.31.2971