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Growth of Epitaxial Layers of In Doping GaAs by the Vapour-Phase Epitaxial Trichloride Method Using a Gallium-Indium Alloyed Source

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Copyright (c) 1987 The Japan Society of Applied Physics
, , Citation M. Lõpez Coronado et al 1987 Jpn. J. Appl. Phys. 26 L193 DOI 10.1143/JJAP.26.L193

1347-4065/26/3A/L193

Abstract

In this letter we report on the In doping of GaAs layers grown by VPE (Chloride Method) using a Ga/In alloyed source. This work contribute to understanding the influence on the isoelectronic doping of parameters such as the source and deposition temperature, the input AsCl3 molar fraction and a HCl excess in the deposition zone, in order to determine the optimum isoelectronic doping conditions in a buffer layer.

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10.1143/JJAP.26.L193