Abstract
In this letter we report on the In doping of GaAs layers grown by VPE (Chloride Method) using a Ga/In alloyed source. This work contribute to understanding the influence on the isoelectronic doping of parameters such as the source and deposition temperature, the input AsCl3 molar fraction and a HCl excess in the deposition zone, in order to determine the optimum isoelectronic doping conditions in a buffer layer.