Abstract
We have proposed a novel device geometry of the bend resistance for collimated ballistic electrons with high magnetic sensitivity. The field response of the bend resistance can be effectively tuned by changing the relative position between two point contacts. The asymmetric field dependence of the bend resistance is found to be induced by introducing conductance asymmetry between the two point contacts. The validity of the proposed device was also confirmed experimentally by using a patterned GaAs/AlGaAs two-dimensional electron gas system.