Abstract
It is essential to control the wettability of soluble organic semiconductors on polymer gate dielectrics to realize low-cost, flexible, and large-area electronic circuits employing organic field-effect transistors using solution processes. We find that the addition of a small amount of silica nanoparticles (SNPs) drastically improves the wettability of the soluble organic semiconductor of 6,13-bis(triisopropylsilylethynyl)pentacene onto the hydrophobic polymer gate dielectric of poly(methylsilsesquioxane) in the spin-coating process. The improvement in wettability by the addition of SNPs is also demonstrated in the ink-jet printing process, which allows the direct patterning of soluble organic semiconductors on polymer gate dielectrics.