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Photoassisted Scanning Tunneling Spectroscopy Study on the Local Spot Strucutres in Thin HfO2 Film on Si

Published 18 April 2008 ©2008 The Japan Society of Applied Physics
, , Citation Noriyuki Miyata 2008 Appl. Phys. Express 1 051602 DOI 10.1143/APEX.1.051602

1882-0786/1/5/051602

Abstract

Local electrical property of thin HfO2 film on Si was investigated by using photoassisted scanning tunneling microscopy and spectroscopy which enable measurement of tunneling current from the Si conduction band to the probe. Significant enhancement in the current was observed at local spot structures which appear on the HfO2 surface during the observation. From the behavior of apparent barrier heights estimated by the current-distance measurement, the author proposes that positive charge exists at the spot.

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10.1143/APEX.1.051602