Abstract
A technique is presented for room temperature spectroscopy of deep levels in semiconductor devices based on measurements of current transients due to barrier capacitance charging. Spectroscopic measurements are obtained from a set of the barrier capacitance charging current transients modified by illumination pulses with wavelength between 1.5 and 10 μm. Deep levels with activation energy in the range between 0.24 and 0.56 eV have been revealed in thyristor and neutron irradiated particle detector structures by using this technique.