Abstract
The STFC Rutherford Appleton Laboratory (U.K.) and Tomsk State University (Russia) have been working together to develop and characterise detector systems based on chromium-compensated gallium arsenide (GaAs:Cr) semiconductor material for high frame rate X-ray imaging. Previous work has demonstrated the spectroscopic performance of the material and its resistance to damage induced by high fluxes of X-rays. In this paper, recent results from experiments at the Diamond Light Source Synchrotron have demonstrated X-ray imaging with GaAs:Cr sensors at a frame rate of 3.7 MHz using the Large Pixel Detector (LPD) ASIC, developed by STFC for the European XFEL. Measurements have been made using a monochromatic 20 keV X-ray beam delivered in a single hybrid pulse with an instantenous flux of up to ∼ 1 × 1010 photons s−1 mm−2. The response of 500 μm GaAs:Cr sensors is compared to that of the standard 500 μm thick LPD Si sensors.