Abstract
This paper reports on the fabrication, simulation, and charge collection characteristics of a new generation of cylindrical silicon microdosimeters fabricated on SOI wafers. The devices consist of an array of p+ electrodes surrounded by trench n+ electrodes creating well defined, cylindrical sensitive volumes. A first batch of microsensors with 5.4 μm active thickness has been successfully fabricated. The devices are fully functional with good diode behavior and a depletion voltage of only 3 V. Their charge collection characteristics have been investigated using the IBIC technique with protons and alpha particles. The IBIC maps show a 100% yield of active cells in a microdosimeter array and full charge collection efficiency in the active area of the unit microsensors. These devices constitute an step forward in the current status of microdosimeters based on silicon technologies.
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Corrections were made to this article on 15 October 2015. The author list was amended.