Research of influence of the underlayer material on the growth rate of carbon nanotube arrays for manufacturing non-volatile memory elements with high speed

This experimental work is devoted to the regimes of obtaining arrays of carbon nanotubes. Arrays of perpendicular nanotubes perpendicular to the surface were obtained by the method of Plasma-enhanced chemical vapor deposition. In this paper, geometric and electronic parameters of carbon nanotubes were investigated depending on the material of the sublayer. The rates of growth of carbon nanotubes on various structures were also determined. In the experiments for growth, structures such as Ni-Al-Si, Ni-V-Si, Ni-Ti-Si, Ni-Cr-Si were used. The growth rates for the intensive section were for the Ni-Cr-Si structure, the growth rate is about 1 μm / min, for the Ni-V-Si structure it is 0.55 μm / min. The growth rates for the saturation region for the Ni-Cr-Si structure, the growth rate is about 0.2 μm / min, for the Ni-V-Si structure 0.16 μm / min. The results obtained in this paper can be used to optimize the growth regimes perpendicularly oriented to the substrate carbon nanotubes, which are used as various elements in modern nanoelectronics.