Tunnel currents produced by defects in p-n junctions of GaAs grown on vapor phase

With the purpose of assessing if the epitaxy on vapor phase technique "Close Space Vapor Deposition (CSVT)" is capable of produce thin films with adequate properties in order to manufacture p-n junctions, a study of invert and direct current was developed, in a temperature range of 94K to 293K, to junctions p-n of GaAs grown through the technique CSVT. It is shown that the dominant current, within the range 10^-7 to 10^-2 A, is consistent with a currents model of the type of internal emission form field, which shows these currents are due to the presence of localized states in the band gap.