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Paper The following article is Open access

Interactions between graphene oxide and wide band gap semiconductors

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Published under licence by IOP Publishing Ltd
, , Citation M Kawa et al 2016 J. Phys.: Conf. Ser. 745 032102 DOI 10.1088/1742-6596/745/3/032102

1742-6596/745/3/032102

Abstract

The graphene oxide (GO) and GO@TiO2 nanocomposite have been synthesised by using modified Hummers method and ultrasonics respectively. The materials were characterized by using X-ray diffraction, Fourier transform infrared spectroscopy and UV-Vis absorption spectroscopy. It was found that the interaction between GO and TiO2 affects the average interlayer spacing in carbonaceous material. The formation of bonds between various oxygen-containing functional groups and surface of titanium dioxide was investigated. One of them formed between the quinone structures (occur in graphene oxide) and titanium atoms exhibited 1.5 bond order. Furthermore the charge-transfer processes in GO@TiO2 composite were observed.

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10.1088/1742-6596/745/3/032102