Abstract
In this article the influence of different amounts of In (0, 0.5, 1 and 3 wt. %) on the thermal and electrical properties of Ge2Sb2Te5 thin films for nonvolatile phase change memory devices is investigated. Crystallization temperature, resistivity, width of the optical band gap, Urbach energy, activation energy and type of conductivity are estimated for all investigated compounds. Storage and data processing times of the PCM cells on the basis of investigated materials were calculated. Nonmonotonic concentration dependences of properties were observed.
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