Abstract
Low-temperature magnetic susceptibility of heavily doped Ge: As samples has been investigated by methods SQUID magnetometry and ESR spectroscopy near the metal-insulator phase transition. Paramagnetic component of the impurity magnetic susceptibility was investigated by ESR previously. Using both techniques make possible to determined the diamagnetic component of impurity susceptibility. The value of the impurity diamagnetic susceptibility equals to 5×10-8 cm3/g and corresponds to the localization radius of the As donor- electron near the metal-insulator phase transition.
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