Abstract
The influence of surface irradiation of GaAs with a KrF excimer laser on the magnitude of the quantum well intermixing (QWI) effect has been investigated on GaAs/AlGaAs and GaAs/AlGaAs/InAlGaAs QWs heterostructures. The selective area irradiation through a SiOx mask was carried out in an atmospheric environment. Following the 1000 pulses irradiation at 100 mJ/cm2, the samples were annealed in a rapid thermal annealing furnace at 900 °C. Photoluminescence mapping and cathodoluminescence measurements show that significant laser-induced suppression of the QWI process can be achieved with lateral resolution of the order of 1μm.
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