Abstract
Analysis of the integrated circuits of a microelectronic device depends on delayering. Focused ion beam (FIB) or broad ion beam (BIB) milling are effective complementary methods of delayering. FIB provides higher removal rates, but is limited in the effective area that can be revealed per unit time, while BIB provides lower removal rates, but has the advantage with respect to the size of the field of view produced. Microstructural features and the appearance of defects were identified and tracked for two model systems: Cu vias and Cu TSVs (through-silicon vias).
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