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The following article is Open access

Low threshold and room-temperature lasing of electrically pumped red-emitting InP/(Al0.20Ga0.80)0.51In0.49P quantum dots

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Published under licence by IOP Publishing Ltd
, , Citation Marcus Eichfelder et al 2010 J. Phys.: Conf. Ser. 210 012009 DOI 10.1088/1742-6596/210/1/012009

1742-6596/210/1/012009

Abstract

In this letter, we report on laser light emission in the red spectral range. Self-assembled InP quantum dots being electrically pumped were embedded in a microcavity mesa realized by monolithically grown high-reflectivity AlGaAs distributed Bragg reflectors. Common semiconductor laser processing steps were used to fabricate stand-alone index-guided vertical-cavity surface-emitting lasers with oxide apertures for optical transverse mode confinement and electrical current constriction. Ultra-low threshold current densities of around 10A/cm2 and room temperature lasing were achieved.

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10.1088/1742-6596/210/1/012009