Microstructure of quantum dots ensembles by EXAFS spectroscopy

S B Erenburg; S V Trubina; N V Bausk; A V Dvurechenskii; A I Nikiforov; V G Mansurov; K S Zhuravlev; S G Nikitenko

doi:10.1088/1742-6596/190/1/012131

Journal of Physics: Conference Series

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Microstructure of quantum dots ensembles by EXAFS spectroscopy

S B Erenburg^1,4, S V Trubina¹, N V Bausk¹, A V Dvurechenskii², A I Nikiforov², V G Mansurov², K S Zhuravlev² and S G Nikitenko³

Published under licence by IOP Publishing Ltd
Journal of Physics: Conference Series, Volume 190, 14TH INTERNATIONAL CONFERENCE ON X-RAY ABSORPTION FINE STRUCTURE (XAFS14) 26–31 July 2009, Camerino, Italy Citation S B Erenburg et al 2009 J. Phys.: Conf. Ser. 190 012131 DOI 10.1088/1742-6596/190/1/012131

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¹ Nikolaev Institute of Inorganic Chemistry SB RAS, Lavrentiev ave. 3, Novosibirsk 630090, Russia

² Institute of Semiconductors Physics SB RAS, Lavrentiev ave. 13, Novosibirsk 630090

³ NOSR (NOW), DUBBLE at ESRF, BP 220, 38043 Grenoble CEDEX 9, France

⁴ Erenburg S.B., Nikolaev Institute of Inorganic Chemistry, Lavrentiev ave. 3, 630090, Novosibirsk, Russia

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Abstract

We investigate the microstructure of Ge/Si and GaN/AlN sandwiches containing vertically aligned QDs. The study establishes an influence of blocking layers (Si, AlN) thickness, number of QDs layers (Ge, GaN) in heterostructure and annealing temperature on the microstructure characteristics of systems with quantum dots.

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Microstructure of quantum dots ensembles by EXAFS spectroscopy

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