Technology of nanoplanar surface preparation of GaSb and InP substrates

In this work, we studied the surface quality dependence of GaSb and InP substrates prepared by various methods of pre-epitaxial preparation, specifically, etching, annealing, and growing a buffer layer. Our main goal was to obtain the most efficient method of pre-epitaxial treatment, which allows preparing substrates with the best surface quality. The experimental results were evaluated by the parameter of the average roughness of the substrate. As a result a combination of the methods of pre-epithelial preparation of GaSb and InP substrates was selected, which made it possible to obtain a root-mean-square surface roughness about 0.6–0.8nm.