Raman scattering and low-frequency noise in epitaxial graphene chips

Graphene is considered as a promising candidate for manufacturing of sensors due to its extreme sensitivity to molecule absorption. In this work, we show the connection between the electrical and optical properties of epitaxial graphene chips grown on 4H-SiC and intended for the production of protein-based sensors. Using of a complex of techniques, including Raman spectroscopy, atomic force microscopy, Kelvin probe microscopy, study of I-V characteristics and low-frequency noise, it is shown that the character of frequency dependence of the spectral density of voltage fluctuations and its value at a frequency of 1 Hz can be used for classification and selection of graphene chips for their application as sensors. Classification of the graphene chips will allow more efficient development of graphene-based biosensors.