Abstract
This article presents the results of a theoretical study of a field emission cell with a vertically oriented emitter. The field emission cell was formed based on a combination of etched methods with a Ga+ focused ion beam and local ion-stimulated tungsten deposition. The influence of the geometric parameters of the field emission cell on the electric field strength at the emitter top is estimated. It was found that a decrease in the rounding-off radius of the emitter top from 150 to 5 nm leads to an increase in the electric field strength by more than an order of magnitude from 1.28 × 106 to 16 × 106 V/cm. A decrease in the diameter of the field emission cell from 2.5 μm to 900 nm contributes to an increase in the electric field strength by 33.6 % from 3.04 × 106 to 4.58 × 106 V/cm.
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