Abstract
In this paper, we consider the synthesis of a compact (SPICE) Schottky diode model on GaN. Synthesis of a compact (SPICE) Schottky diode model is implemented on the basis of a modified model of a conventional diode on a p-n junction by extracting the parameters contained in it from experimental data. To create the structures of the Schottky diodes, epitaxial structures of gallium nitride grown by the MOCVD method on a sapphire substrate were used. Ohmic contacts of diode structures were formed on ion-doped epitaxial layers. The result of the simulation of diode structures is the extraction from experimental data of parameters of the compact model of a Schottky diode on GaN.
Export citation and abstract BibTeX RIS
Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.