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Paper

Coupling effect of quantum wells on band structure

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© 2015 Chinese Institute of Electronics
, , Citation Jie Chen and Weiyou Zeng 2015 J. Semicond. 36 102005 DOI 10.1088/1674-4926/36/10/102005

1674-4926/36/10/102005

Abstract

The coupling effects of quantum wells on band structure are numerically investigated by using the Matlab programming language. In a one dimensional finite quantum well with the potential barrier V0, the calculation is performed by increasing the number of inserted barriers with the same height Vb, and by, respectively, varying the thickness ratio of separated wells to inserted barriers and the height ratio of Vb to V0. Our calculations show that coupling is strongly influenced by the above parameters of the inserted barriers and wells. When these variables change, the width of the energy bands and gaps can be tuned. Our investigation shows that it is possible for quantum wells to achieve the desired width of the bands and gaps.

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10.1088/1674-4926/36/10/102005