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Paper

Realization of low-energy type-II Dirac fermions in (Ir1−xPtx)Te2 superconductors*

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© 2019 Chinese Physical Society and IOP Publishing Ltd
, , Citation Bin-Bin Fu et al 2019 Chinese Phys. B 28 037103 DOI 10.1088/1674-1056/28/3/037103

1674-1056/28/3/037103

Abstract

Topological Dirac semimetals (DSMs) present a kind of topologically nontrivial quantum state of matter, which has massless Dirac fermions in the bulk and topologically protected states on certain surfaces. In superconducting DSMs, the effects of their nontrivial topology on superconducting pairing could realize topological superconductivity in the bulk or on the surface. As superconducting pairing takes place at the Fermi level EF, to make the effects possible, the Dirac points should lie in the vicinity of EF so that the topological electronic states can participate in the superconducting paring. Here, we show using angle-resolved photoelectron spectroscopy that in a series of (Ir1−xPtx)Te2 compounds, the type-II Dirac points reside around EF in the superconducting region, in which the bulk superconductivity has a maximum Tc of ∼ 3 K. The realization of the coexistence of bulk superconductivity and low-energy Dirac fermions in (Ir1−xPtx)Te2 paves the way for studying the effects of the nontrivial topology in DSMs on the superconducting state.

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The interplay between topological states and superconductivity is an important issue in condensed matter physics.[1,2] One consequence of the interplay is the generation of Majorana fermions at the boundary of a topological superconductor, which can be used for topological quantum computation. Tremendous efforts have been made to induce superconductivity in topological materials through various approaches, such as introducing carriers, applying external pressure, and proximity effect, or to search for superconductors with nontrivial topological electronic states. Superconductivity has been observed in doped topological insulators, such as Cu-intercalated Bi2Se3,[3] Bi2Te3 under pressure,[4] Bi2Se3 thin films on superconducting NbSe2 substrate,[5] and In-doped SnTe.[6] Several superconductors such as RPtBi (R: rare earth elements),[710] Bi2Pd,[11] and FeTe0.55Se0.45[12,13] have been revealed to have a nontrivial topology similar to that of topological insulators.

In addition to superconducting topological insulators, theory has proposed that in superconducting Dirac and Weyl semimetals, topological superconductivity can also be realized for the bulk or the surface due to their nontrivial topology.[1416] Experimentally, the superconductivity was induced by point contact[17,18] or under high pressure[19] in the Dirac semimetal (DSM) Cd3As2. The point contact spectra of Cd3As2 show a zero-bias conductance peak, suggesting unconventional superconductivity around the point contact region.[17,18] Recent studies have reported that several transition metal dichalcogenide (TMD) compounds PtTe2,[20] PdTe2,[21,22] and PtSe2[23] with the CdI2-type 1T structure host type-II Dirac points in their electronic structures. As illustrated in Figs. 1(c) and 1(d), distinct from type-I DSMs like Na3Bi[24,25] and Cd3As2,[26,27] type-II DSMs possess over-tilted Dirac cones so that the two Dirac bands have the same sign in their slope along one direction, in analogy to the type-II Weyl semimetals.[2830] As the type-II Dirac points in these TMD compounds reside far below EF, the Dirac fermions should have little contribution to the low-energy quasiparticle excitations at EF. Very recently, Fei et al. reported that the energy position of the type-II Dirac points in Ir1−xPtxTe2 can be easily tuned by element substitution.[31] The Dirac points arrive at EF at x ∼ 0.3, where a bulk superconductivity emerges with Tc = 0.15 K.

Fig. 1.

Fig. 1. Crystal structure and calculated electronic structures of IrTe2. (a) Crystal structure. Orange and blue balls represent Ir and Te atoms, respectively. Black dashed lines indicate the unit cells. (b) Bulk BZ and projected (100) surface BZ. Red dots on ΓA line (labeled as D) mark the momentum locations of the Dirac points (DPs). (c) and (d) Schematic illustrations of type-I and type-II Dirac cones, respectively. (e) Calculated 3D Fermi contours at the energy of the Dirac points. (f) and (g) Calculated bands along ΓA and SDT, respectively, showing the band structures of the type-II Dirac points. (h) and (i) Projection of calculated band dispersions along $\tilde{Z}-\tilde{\Gamma }$ and $\tilde{Z}-\tilde{T}$, respectively, on (100) surface.

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In this work, by combining angle-resolved photoemission spectroscopy (ARPES), energy-dispersive x-ray spectroscopy (EDX), x-ray diffraction (XRD), and transport measurements, we systematically investigated the evolution of electronic structures and superconductivity of (Ir1−xPtxTe2 with different doping levels. We found that the type-II Dirac points lie around EF in the superconducting region, in which the bulk superconductivity has a maximum Tc of ∼ 3 K, which is accessible in many experimental techniques, making it possible to study the physical properties of Dirac fermions in the superconducting state.

High quality (Ir1−xPtxTe2 single crystals were synthesized by Te flux method. The chemical compositions of the single crystals for each doping level were analyzed by EDX in a Hitachi S-4800 at an accelerating voltage of 15 keV. Longitudinal resistivity was measured in an Oxford He-3. High resolution ARPES measurements were performed at the "Dreamline" beamline of the Shanghai Synchrotron Radiation Facility, the I05 beamline of the Diamond Light Source, and the 13U beamline of the National Synchrotron Radiation Laboratory at Hefei, with the energy and angular resolutions set at 15 meV and 0.2°, respectively. All the samples were cleaved in situ in vacuum condition better than 5×10−11 Torr and measured between 15–20 K. The first-principles calculations were performed to calculate the electronic structure of the 1T-structure IrTe2 with the projector augmented wave (PAW) method as implemented in VASP package.[32] The tight-binding Hamiltonians of semi-infinite samples are constructed by the maximally localized Wannier functions (MLWFs) for all the Ir d and Te p orbitals, which are generated from the first-principles calculations. The (100) surface Green's functions of the semi-infinite sample are obtained using an iterative method.

Our first-principles calculations show that the electronic structure of 1T-structure IrTe2 is similar to that of PdTe2, except that the type-II Dirac points lie at 0.18 eV above EF in IrTe2 (Figs. 1(f) and 1(g)). This is because the number of valence electrons of IrTe2 is one less than that of PdTe2. The calculated three-dimensional (3D) constant energy surface at the energy of the Dirac point in Fig. 1(e) shows that a small electron pocket touches with a large hole pocket at one point, which is an indication of a type-II Dirac point.

Like in other DSMs such as Na3Bi and Cd3As2, the Dirac points in IrTe2 are associated with an inverted band structure. The band inversion in IrTe2 occurs at A point around EF. With the protection of threefold-rotation symmetry, the band crossing along ΓA is stabilized, forming the type-II Dirac points. It is thus expected that there are topological surface states (TSSs) in the inverted band gap. Our calculations confirm the existence of TSSs around $\tilde{Z}$ point on (100) surface, as shown in Figs. 1(h) and 1(i). When the Dirac points reside around EF, the TSSs cross EF, forming a closed Fermi surface (FS) or a pair of Fermi arcs connecting to the surface projection of the Dirac points.

At room temperature, IrTe2 is isostructural to the 1T-structure PdTe2 (Fig. 1(a)) and a structural phase transition occurs at ∼ 250 K.[33] By substituting Pt or Pd with Ir, the structural transition is rapidly suppressed, which is accompanied with the appearance of bulk superconductivity.[33] In the phase diagram of (Ir1−xPtxTe2, Tc reaches a maximum of ∼ 3 K at x = 0.05 and gradually decreases as the Pt content is further increased.[33] We have synthesized a series of (Ir1−xPtx)Te2 single crystals with the nominal x up to 0.5. Our resistivity measurements show bulk superconductivity for x = 0.05 and 0.1 (Fig. 2(a)). The EDX measurements confirm that the chemical compositions are consistent with the nominal ones (Fig. 2(b)). The variation of Ir and Pt contents is further confirmed by core level photoemission measurements in Fig. 2(d). The x-ray diffraction data recorded on the (001) plane in Fig. 2(c) show a reduction of the c lattice as the Pt content increases. These results clearly indicate variation of the chemical compositions in the series of (Ir1−xPtxTe2 samples that we have synthesized.

Fig. 2.

Fig. 2. Superconductivity and chemical compositions of (Ir1−xPtxTe2. (a) Resistivity as a function of temperature for the samples with x = 0.05, 0.1, and 0.25. (b) Representative EDX spectrum of one sample with the nominal x = 0.1. The inset shows the percentages of Ir, Pt, and Te elements, which are consistent with the nominal composition. (c) XRD data recorded on the (001) plane of single crystals with x = 0.05, 0.1, 0.25, and 0.5. Inset shows that the (003) peak position gradually shifts to higher angles as the Pt content increases. (d) Shallow core level spectra of the samples with x = 0.05, 0.1, 0.25, and 0.5. The two insets show the evolution of intensities of the Ir 4f and Pt 4f peaks, respectively, with Pt substitution.

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Since IrTe2 and PtTe2 have similar electronic structures, in which the Dirac points reside above and below EF, respectively, the Dirac points can be tuned to EF in between them. To determine the composition that the Dirac points traverse EF, we investigate the electronic structures of (Ir1−xPtxTe2 with different doping levels using ARPES.

In Fig. 3, we display the ARPES results of the x = 0.5 sample. The calculations indicate that the Dirac point is located on the high-symmetry line ΓA along the kz direction. The ARPES experiments were preformed on the (001) cleavage surface. To search for the theoretically predicted Dirac point, we have measured the band structures in the kxky planes at different kz values by varying the photon energy hν of incident lights, according to the formula ${k}_{z}=\sqrt{2m(h\nu -\phi +{V}_{0})}/\hslash $, where ϕ and V0 are the work function and inner potential, respectively. Figures 3(a) and 3(b) show the ARPES intensity plots and corresponding curvature intensity plots, respectively, along ΓK direction taken with different photon energies. There is a Dirac-like band crossing at −0.62 eV in all the cuts in Figs. 3(a) and 3(b). The dispersions of the crossing bands do not change as hν varies, indicating their surface origin. Notably, there is another Dirac-like band crossing at −0.27 eV in the cut measured at hν = 22 eV (Figs. 3(a3) and 3(b3)). The crossing bands become separated in the other cuts measured with different hν values, indicating that the observed band crossing at −0.27 eV is a 3D Dirac point. The upper branch of the Dirac bands slightly shifts downwards as hν increases from 22 eV to 24 eV, but rapidly moves upwards as hν decreases from 22 eV to 20 eV. It seems that the ARPES intensity plot in Fig. 3(a1) at hν = 20 eV exhibits an outline of an electron-like band below EF, whereas the maximum intensity appears at EF. This suggests that the electron-like band is actually located above EF while the intensity below EF could arise from a kz broadening, which is not negligible due to short mean free length of excited photoelectrons. The lower branch of the Dirac bands evolves into a M-shaped band as hν increases from 22 eV to 24 eV and a hole-like band as hν decreases from 22 eV to 20 eV. As indicated by the guide lines in Fig. 3(a), on the ΓA line, the bands monotonically shift downwards as hν increases from 20 eV to 24 eV, which is consistent with the band calculations in Fig. 3(c). This means that the two crossing bands have the same sign in the slope along the kz direction, confirming that the Dirac point belongs to the type-II class. In addition to the Dirac band, we observed some other bands that cross EF at ky ∼ ±0.4 Å−1 in Figs. 3(a) and 3(b). These bands do not change as hν varies, and are not consistent with the calculated bulk bands, indicating their surface origin. Figure 3(d) shows the stacking ARPES intensity maps at several constant energies measured at hν = 22 eV. There is a circular FS around the Brillouin zone (BZ) center at EF. The FS shrinks into a point at −0.27 eV and then grows into a circle again as the energy is further reduced. These results exhibit that the Dirac cone is nearly isotropic in the kxky plane. The Dirac point of the x = 0.5 sample lies at 0.27 eV below EF, which is closer to EF as compared with that in PtTe2, where the Dirac point lies at ∼ 1 eV below EF.[20]

Fig. 3.

Fig. 3. Electronic structure of the (Ir1−xPtxTe2 sample with x = 0.5. (a) ARPES intensity plots along the ΓK direction measured at (a1) hν = 20 eV, (a2) 21 eV, (a3) 22 eV, (a4) 23 eV, and (a5) 24 eV. (b) Corresponding curvature intensity plots. (c) Calculated band structure along ΓA of IrTe2. We determine the chemical potential of Ir0.5Pt0.5Te2 at 0.46 eV, as marked by the horizontal dashed line. The vertical dashed lines indicate the kz locations of the measured cuts in panels (a) and (b). The inner potential V0 is set to be 13 eV and the lattice constant c is determined to be 5.27 Å from the XRD data in Fig. 2(c). (d) Stacking plot of the ARPES intensity maps at several constant energies measured at hν = 22 eV, showing the nearly isotropic Dirac cone structure in the kxky plane.

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Next we focus on the evolution of band structures with the Pt substitution. For all the samples with different Pt contents, the measured band structures are almost consistent except for the energy positions relative to EF. Figures 4(a)4(d) show the band dispersions along ΓK direction measured at hν = 22 eV for the (Ir1−xPtxTe2 samples with x = 0.05, 0.1, 0.25, and 0.5, respectively. The results clearly show that the Dirac point monotonically shifts upwards with the decrease of Pt content. In Fig. 4(g), we extract the Dirac bands from the ARPES data. Figure 4(h) plots the energy position of the Dirac point as a function of Pt content, from which we determine that the Dirac point passes through EF at x ∼ 0.1. Figure 4(e) exhibits that two linearly dispersive bands for the x = 0.1 sample cross each other at EF, leading to a point-like FS at the BZ center in Fig. 4(f). Figure 4(h) shows that the Dirac point does not shift linearly with the doping level. The energy shift becomes faster at higher Pt contents. The extrapolation based on the trend is consistent with the previous result in PtTe2.[20] We note that if the calculated bands of IrTe2 are rigidly shifted, the Dirac point would pass through EF around x = 0.25. This value is higher than that determined from our experimental results. This might be because the band calculations slightly overestimate the energy of the Dirac point in IrTe2. The previous study in PtTe2 shows similar inconsistency between calculation and experiment,[20] with a discrepancy of ∼ 0.1 eV.

Fig. 4.

Fig. 4. Evolution of the Dirac point with Pt substitution. (a)–(d) Band dispersions along the ΓK direction measured at hν = 22 eV for the (Ir1−xPtxTe2 samples with x = 0.05, 0.1, 0.25, and 0.5, respectively. (e) Second derivative intensity plot of the data in panel (b), showing the Dirac point lying at EF for the x = 0.1 sample. Dashed lines are guide to the eye, indicating the linear Dirac bands. (f) ARPES intensity map at EF measured at hν = 22 eV for the x = 0.1 sample, showing the point-like FS at the BZ center. (g) Extracted Dirac bands from the data in panels (a) to (d). (h) Energy of the Dirac point as a function of the Pt content. The energy for PtTe2 is extracted from the previous result in Ref. [20].

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The substitution of Pt in IrTe2 not only raises the chemical potential, making the type-II Dirac points approach EF, but also introduces bulk superconductivity into the system. The maximum Tc is up to ∼ 3 K, which is accessible in many experimental techniques, making it possible to study the physical properties of Dirac fermions in the superconducting state. The theoretical studies have proposed that topological superconductivity could be realized in type-I DSMs.[14,15] In contrast, there is no theoretical study on the superconducting properties of type-II DSMs. Moreover, as the Dirac points are close to EF in the superconducting (Ir1−xPrx)Te2, the associated topological surface bands may cross EF, forming a pair of Fermi arcs or a closed FS. The proximity effect induces superconductivity in the TSSs below Tc, which could realize two-dimensional topological superconductivity on the surface of DSMs, in analogy to that in superconducting topological insulators. Our results suggest that the Pt-substituted IrTe2 would be a promising material for studying the topological superconductivity of bulk and surface states in DSMs, and may find potential application in novel quantum devices such as quantum computers.

Acknowledgment

We thank Chen Fang for the discussion. Y.B.H. acknowledges support by the Chinese Academy of Sciences (CAS) Pioneer "Hundred Talents Program" (type C).

Footnotes

  • Project supported by the Ministry of Science and Technology of China (Grant Nos. 2016YFA0300600, 2016YFA0401000, 2016YFA0302400, and 2017YFA0302901), the National Natural Science Foundation of China (Grant Nos. 11622435, U1832202, and 11674369), the Chinese Academy of Sciences (Grant Nos. QYZDB-SSW-SLH043, XDB07000000, and XDPB08-1), and the Beijing Municipal Science and Technology Commission, China (Grant No. Z171100002017018).

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10.1088/1674-1056/28/3/037103