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Robust quantum spin Hall state and quantum anomalous Hall state in graphenelike BC3 with adatoms

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Published 26 July 2018 © 2018 The Author(s). Published by IOP Publishing Ltd on behalf of Deutsche Physikalische Gesellschaft
, , Citation Yinchang Zhao et al 2018 New J. Phys. 20 073047 DOI 10.1088/1367-2630/aad357

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1367-2630/20/7/073047

Abstract

Two-dimensional (2D) topological insulators (TIs) and Chern insulators (CIs) promise quantum spin Hall (QSH) and quantum anomalous Hall (QAH) states without dissipation. By combining first-principles calculations with Wannier functions-based tight-binding (TB) modeling, we demonstrate that the graphenelike BC3, which was fabricated early in experiment, can become 2D TIs and CIs through suitable decoration of adatoms. For the thallium (Tl) decorated BC3 systems, three low-energy structures with the same stoichiometry of BC3Tl, whose stabilities are verified by the ab initio evolutionary algorithm, are found to be robust 2D TIs with the largest topologically nontrivial band gap of about 224 meV. For the transition metal atoms adsorbed BC3, three (2 × 2) BC3 systems with one adatom of technetium (Tc), rhenium (Re), or ruthenium (Ru) are found to be good CIs with the ferromagnetic moments of 1 to 2 μB, nontrivial gaps of 38–50 meV, and nonzero Chern numbers of −1 to 1. These properties indicate that the systems of graphenelike BC3 with adatoms are good platforms for the study of QSH and QAH effects.

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1. Introduction

Topological insulators (TIs), characterized by insulating bulk and metallic surface or edge states, have attracted great interest [13]. The carriers in the surface or edge states of TIs are helical Dirac fermions behaving as massless relativistic particles with an intrinsic spin locked to its translational momentum due to time-reversal symmetry (TRS) [4], which allows a possible realization of dissipationless coherent spin transport [5, 6]. Specially, in two-dimensional (2D) TIs (also known as quantum spin Hall (QSH) insulators), the carriers in the edge states only move along two directions with opposite spins, and thus are insensitive to nonmagnetic edge modification, making the 2D TIs be more suitable for dissipationless device applications [7]. Unfortunately, it is challengeable to realize 2D TIs experimentally, although many three-dimensional TIs are identified [8, 9]. To date, only the HgTe/CdTe and InAs/GaSb/AlSb quantum well systems are well-established, but their bulk gaps are too small, with the QSH effect observed only below 10 K [1012]. Hence hunting of feasible room-temperature QSH insulators is of great significance for practical applications. To this end, extensive effort has been devoted and many strategies to obtain the 2D TIs with large nontrivial gaps have been followed [1318].

Chern insulators (CIs), also called quantum anomalous Hall (QAH) insulators, are 2D magnetic insulators showing quantized anomalous Hall conductivities Ce2/h with C as an integer topological index (the so-called Chern number) [19]. The essential ingredients of CIs are the spontaneous TRS breaking and the presence of spin–orbit coupling (SOC), which gives rise to a net Berry curvature needed for the nonzero Chern number. So far, a number of theoretical proposals have been made to realize the CIs states [2026]. The typical examples are the magnetically doped TIs [20, 21], which results in the first experimental observation of QAH effects in Cr doped (Bi, Sb)2Te3 films [27], a milestone discovery in search of novel topological states. Besides the magnetically doped TIs, many honeycomb or square lattices composed of transition metal and heavy-metal ions have been also proposed to be potential CIs [2226]. For instance, a hexagonal lattice formed by molecular building blocks of triphenyl-transition metal compounds has been confirmed to be a class of organic CIs with nonzero Chern numbers and nontrivial band gaps [23]; a square CrO2/TiO2 superlattice has been reported to be a CI with a Chern number of ±2 [26], etc.

Recently, atom adsorbed or functionalized graphene, silicene, germanene, and stanene have been proposed to be potential 2D TIs and CIs [13, 14, 22, 28, 29]. However, in graphene adsorption systems, the adatoms are weakly adsorbed on graphene, and the nontrivial gaps opened are usually small and far away from Fermi level [30]. In silicene, germanene, and stanene based systems, the binding between adatoms and substrates is much enhanced, and the nontrivial gaps are also enlarged due to the enhancement of SOC. But the facts that silicene, germanene, and stanene have inferior mechanical strength than graphene and cannot be produced by micromechanical exfoliation put forward new challenges in experiments to realize QSH and QAH states in these materials based systems. Therefore, a new system based on a 2D material as stable as graphene is required for seeking robust QSH and QAH states. Here we turn to the graphenelike BC3 to seek these novel topological states.

The graphenelike BC3, which has been fabricated in experiment [31], has mechanical strength comparable to graphene. The binding between adatoms and BC3 is also much enhanced relative to that in graphene adsorption systems [3234]. Moreover, the bulk BC3 produced early by chemical synthesis is formed by stacked layers that are coupled by Van der Waals interaction [35], which makes the fabrication of BC3 sheet be probable by micromechanical exfoliation from the bulk counterpart, same as the production of graphene from graphite [36]. To date, high-capacity hydrogen storage [32, 33], tunable Fermi surface nesting-derived magnetic phase [34], and novel topological p + ip superconductivity [37] have been studied in BC3 based systems. But the topological properties of this 2D material is lacking. In this paper, we systematically study the topological electronic properties of BC3, and demonstrate that it can become 2D TIs and CIs through suitable decoration of adatoms. We find that three structures of thallium (Tl) decorated BC3 are robust 2D TIs with the largest nontrivial gap of 224 meV, and three kinds of transition metal atoms adsorbed BC3 are good CIs with the nonzero Chern numbers and nontrivial gaps exceeding 38 meV. These findings indicate that the systems of graphenelike BC3 with adatoms are good platforms for realizing QSH and QAH effects.

2. Methodology

Our first-principles calculations are carried out within the density functional theory implemented in VASP [38, 39]. The projector augmented wave potentials [40] and a plane-wave basis set with the cutoff energy of 520 eV and the exchange-correlation functional of generalized gradient approximation (GGA) of Perdew–Burke–Ernzerhof (PBE) [41] are utilized to model the ion cores and valance electrons, respectively. A vacuum space larger than 18 Å is taken to eliminate the interaction between adatom-BC3 layer and its periodic images. The atomic geometries are fully relaxed until the Hellman–Feynman force on each atom is less than 0.01 eV Å−1. For the adsorption systems within (1 × 1), ($1\times \sqrt{3}$), ($\sqrt{3}\times \sqrt{3}$), and (2 × 2) BC3 supercells, the Γ-centered Monkhorst–Pack sampling grid of 18 × 18 × 2, 18 × 12 × 2, 12 × 12 × 2, and 9 × 9 × 2 are used to simulate their electron-momentum integrations, respectively. To gain stable adsorption structures, the total energies of all possible adsorption configurations are traversed. After the energetically stable structures are confirmed, the required tight-binding (TB) models in calculations of topological properties are created from maximally localized Wannier functions (MLWF) via Wannier90 package [42]. Based on the MLWF TB models, the topological electronic properties are calculated by Wannier Tools [43]. These calculations are checked by Z2Pack program [44] and ${postw}90.x$ code of Wannier90 package [42], and consistent results are obtained. In addition, for further verifying the energy stabilities of the Tl decorated BC3 systems, the structure searches based on ab initio evolutionary algorithm coded in USPEX [4547] are also performed with the low-energy structures obtained from traversal as input seeds.

3. Results and discussion

Due to the lack of dangling bonds, the graphenelike BC3, which has eight atoms in each primitive cell and shares the same point group with graphene, is a semiconductor with an indirect band gap of 0.62 eV, as shown in figure 1. The first and second conduction bands are the π and π* bands, respectively. At the K (K') point, there is a Dirac cone with the degeneracy between the π and π* bands. Because of the composition of light elements, the intrinsic SOC of BC3 is very weak, which makes the SOC gap opened at the Dirac cone be fairly small, similar to that in graphene [28]. Hence it is essential to adsorb metal atoms to enhance SOC, and the adsorbed metal atoms should contain valence electrons of p or d orbitals because the electrons of these orbitals have nonzero SOC according to ${\hat{H}}_{{\rm{SOC}}}=\lambda \hat{L}\cdot \hat{S}=\tfrac{\lambda }{2}[{\hat{J}}^{2}-{\hat{L}}^{2}-{\hat{S}}^{2}]$ with $\hat{J}=\hat{L}+\hat{S}$. Meanwhile, the decoration of metal adatoms must provides electron doping to BC3, giving rise to the shift of Fermi level towards Dirac cone. In addition, the binding between adatoms and BC3 should be as strong as possible to form stable adsorption.

Figure 1.

Figure 1. The band structure for pristine BC3 primitive cell. The inset shows the corresponding atomic structure, where the green and yellow balls represent the B and C atoms, respectively.

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3.1. QSH states in Tl decorated BC3 sheets

Based on the requirements above, we find that suitable adsorption of Tl atoms on BC3 maintains the Dirac cone character and shifts Fermi level just to the Dirac cone simultaneously. These adsorption systems are the configurations with the stoichiometry of BC3Tl, which corresponds to each BC3 primitive cell adsorbing with two Tl atoms. Via traversing the total energies of all possible adsorption configurations for the (1 × 1), ($1\times \sqrt{3}$), ($\sqrt{3}\times \sqrt{3}$), and (2 × 2) BC3 supercells, we obtain four low-energy structures, as shown in figures 2(a)–(d), in which Tl atoms tend to be adsorbed uniformly on each side of BC3 sheet and fall on the hollow site of the B2C4 rings of BC3. According to their space groups and sizes of the BC3 supercells, the four low-energy structures are designated as C222@(1 × 1), Pmna@($1\times \sqrt{3}$), Pma2@($1\times \sqrt{3}$), and P-3m1@($\sqrt{3}\times \sqrt{3}$), as shown in figures 2(a)–(d), respectively. The binding energies between adatoms Tl and BC3 in these structures are calculated by ${E}_{b}={E}_{{{\rm{BC}}}_{3}}+{E}_{{\rm{Tl}}}-{E}_{{{\rm{BC}}}_{3}{\rm{Tl}}}$, where ${E}_{{{\rm{BC}}}_{3}}$, ETl, and ${E}_{{{\rm{BC}}}_{3}{\rm{Tl}}}$ are the total energies of bare BC3 sheet, isolated Tl atom, and adsorption system, respectively. The calculated binding energies Eb together with the structural parameters of these structures are listed in table 1. The values of Eb exceed the calculated cohesive energy Ec (∼1.95 eV) of the bulk Tl metal, which means that the clustering of adatoms Tl is completely suppressed.

Figure 2.

Figure 2. The atomic structures (top) and corresponding Brillouin zones (bottom) for the stable Tl decorated BC3 sheets (BC3Tl) with the designations of (a) C222@(1 × 1), (b) Pmna@($1\times \sqrt{3}$), (c) Pma2@($1\times \sqrt{3}$), and (d) P-3m1@($\sqrt{3}\times \sqrt{3}$). The green and yellow balls represent the B and C atoms, and the red and blue balls are the Tl atoms decorated on different sides of BC3. (e)–(g) The enthalpy evolutions for the BC3Tl films with the unit cells containing 10, 20, and 30 atoms, respectively, in which the structures of C222@(1 × 1), Pmna/Pma2@($1\times \sqrt{3}$), and P-3m1@($\sqrt{3}\times \sqrt{3}$) are taken as their respective input seeds.

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Table 1.  The calculated structural parameters (lattice vectors a and b, included angle γ between a and b, and thickness δ), binding energies (Eb) between adatoms Tl and BC3 sheet, ratios between Eb and cohesive energy Ec (∼1.95 eV) of bulk Tl metal (Eb/Ec), nontrivial band gaps (Eg), and ${{\mathbb{Z}}}_{2}$ invariants for the Tl decorated BC3 sheets (BC3Tl) with the designations of C222@(1 × 1), Pmna@($1\times \sqrt{3}$), Pma2@($1\times \sqrt{3}$), and P-3m1@($\sqrt{3}\times \sqrt{3}$).

BC3Tl a b γ δ Eb Eb/Ec Eg ${{\mathbb{Z}}}_{2}$
  (Å) (Å) () (Å) (eV)   (meV)  
C222@(1 × 1) 5.21 5.22 120.05 2.35 2.07 1.06 224 1
Pmna@($1\times \sqrt{3}$) 5.21 9.02 90 2.35 2.07 1.06 220 1
Pma2@($1\times \sqrt{3}$) 5.21 9.02 90 2.35 2.07 1.06 200 1
P-3m1@($\sqrt{3}\times \sqrt{3}$) 9.03 9.03 120 2.35 2.07 1.06 20 1

The four low-energy adsorption structures can be taken as stable monolayer BC3Tl films with a fixed thickness of 2.35 Å, as listed in table 1. To verify whether these structures are more stable than other possible BC3Tl films, we search more 2D BC3Tl allotropes based on ab initio evolutionary algorithm. The searches are performed in the unit cells containing n units of BC3Tl, where the integer n = 2, 3, 4, 5, 6, 7, and 8, which means that there are 10, 15, 20, 25, 30, 35, and 40 atoms, respectively, in the unit cells for each search. The initial structures are randomly generated using the plane group symmetry with a given initial thickness of 4.5 Å. In the searches with the unit cells containing 10, 20, and 30 atoms, the structures of C222@(1 × 1), Pmna/Pma2@($1\times \sqrt{3}$), and P-3m1@($\sqrt{3}\times \sqrt{3}$) are taken as their respective input seeds. Our search findings indicate that the structures with lower total enthalpies are found in the unit cells containing 10, 20, and 30 atoms. In all of the newly found BC3Tl allotropes, only the four seed configurations of C222@(1 × 1), Pmna@($1\times \sqrt{3}$), Pma2@($1\times \sqrt{3}$), and P-3m1@($\sqrt{3}\times \sqrt{3}$) are the energetically stable structures, as shown in figures 2(e)–(g). Moreover, the phonon dispersion calculations demonstrate that all of these four structures locate at the local minimums in the energy landscapes due to the absence of any imaginary frequency in the phonon dispersion spectra, as shown in figure A1 in the appendix. These results imply that the four stable BC3Tl adsorption structures may be synthesized directly on a suitable substrate in an epitaxial way.

The band structures excluding and including SOC for the four stable BC3Tl structures based on the GGA-PBE calculations are plotted in the left and middle panels in figure 3. When the SOC is excluded, these structures are semimetals with Fermi level just at the Dirac cone. The atomic orbital projections on the bands exhibit that a fairly large part of the Dirac cone states are contributed by the p orbital electrons of the adatoms Tl, which hints strong SOC in these systems. As a result, when the SOC is included, the Dirac cones are prominently split, as shown in the middle panels in figure 3, and thus the large opened band gaps of 224, 220, and 200 meV are obtained for the C222@(1 × 1), Pmna@($1\times \sqrt{3}$), and Pma2@($1\times \sqrt{3}$) structures, respectively, as listed in table 1. However, the opened gap for the P-3m1@($\sqrt{3}\times \sqrt{3}$) structure is only 20 meV, which will be interpreted later. Due to three of the four stable BC3Tl structures being noncentrosymmetric, the ${{\mathbb{Z}}}_{2}$ invariants of these structures are calculated by the evolution of Wannier charge centers during the time-reversal pumping process, which is a method independent of the presence of inversion symmetry [48, 49]. Meanwhile, the method suggested by Fu and Kane [50] is also used to check the ${{\mathbb{Z}}}_{2}$ of the centrosymmetric P-3m1@($\sqrt{3}\times \sqrt{3}$) structure, and consistent result is obtained. Our GGA-PBE calculations show that the ${{\mathbb{Z}}}_{2}$ of all the four stable BC3Tl structures are +1, as listed in table 1, indicating that these structures are QSH insulators. Strikingly, for the C222@(1× 1), Pmna@($1\times \sqrt{3}$), and Pma2@($1\times \sqrt{3}$) structures, the nonzero ${{\mathbb{Z}}}_{2}$ combined with the large nontrivial gaps of 200–224 meV signifies that these structures are the 2D TIs that promise room-temperature dissipationless QSH states, similar to the functionalized germanene and stanene [13, 14].

Figure 3.

Figure 3. The band structures excluding SOC (left) and including SOC (middle) and the edge state spectra of the corresponding semiinfinite systems (right) for the Tl decorated BC3 sheets (BC3Tl) with the designations of (a) C222@(1 × 1), (b) Pmna@($1\times \sqrt{3}$), (c) Pma2@($1\times \sqrt{3}$), and (d) P-3m1@($\sqrt{3}\times \sqrt{3}$), respectively. The fatness of the red color in the left panels represents the p orbitals projection of Tl atoms. The insets in (d) show the zoomed-in bands around the Γ point.

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One of the prominent features of 2D TIs is the presence of the gapless edge state with spin-momentum locking. There are two methods to get the edge state spectrum. One is to compute the band structures of the nanoribbon systems directly, and the other is to calculate the edge Green's function for a semiinfinite system [51]. We use the later method and select the (01) edge to calculate the edge state spectrum. It is worth noting that the 2D Miller index of (01) mentioned here is based on the unit cells shown in figures 2(a)–(d). The GGA-PBE calculated edge state spectra for the four stable BC3Tl structures are shown in the right panels in figure 3, in which the existence of helical Dirac edge states connecting the conduction and valence bands further indicates that these structures are indeed 2D TIs.

From ${{\mathbb{Z}}}_{2}$ invariants and edge states calculated by the GGA-PBE exchange-correlation functional, one can know that the topological properties of the four stable BC3Tl structures remain unchanged with the changing of adsorption configurations, which is an important feature of the topological systems. However, the topological properties are not always remaining unchanged for every stable adsorption configuration. For instance, in adatoms decorated ($3n\times 3n$) graphene, since Dirac cone is folded back to the Γ point and adatoms decoration induces a coupling between two Dirac cones, a trivial band gap around the Dirac cone is opened, and thus the topological properties of the adsorption systems are destroyed [52]. This is the so-called intervalley scattering mentioned in literatures. A typical instance for the BC3 sheet is the ($\sqrt{3}\times \sqrt{3}$) supercell. Due to the fold of BZ, there exists a pair of Dirac cones at the Γ point in the bare ($\sqrt{3}\times \sqrt{3}$) BC3 sheet. After the decoration of six Tl atoms, the stable P-3m1@($\sqrt{3}\times \sqrt{3}$) BC3Tl structure is gained, in which an accidental degeneracy between the valence and conduction bands occurs at the Γ point based on the GGA-PBE calculations, and the dispersion around the Dirac cone is no longer linear but become parabolic, signifying a strong intervalley scattering in this system, as shown in figure 3(d). When the SOC is included, a nontrivial gap of 20 meV is opened and thus the topological electronic properties are not destroyed by the intervalley scattering based on the GGA-PBE results. To further check the topological properties, the SCAN functional of meta-GGA [53], which is superior to most gradient corrected functionals [54], is used to recalculate the band structures and ${{\mathbb{Z}}}_{2}$ invariants. The meta-GGA-SCAN calculations provide the same topological properties as those of the GGA-PBE results for the C222@(1× 1), Pmna@($1\times \sqrt{3}$), and Pma2@($1\times \sqrt{3}$) BC3Tl structures, as shown in figures A2(a)–(c) in the appendix. However, for the P-3m1@($\sqrt{3}\times \sqrt{3}$) structure, there is no degeneracy between the valence and conduction bands but a band gap of 39 meV around the Fermi level in the band structure without SOC based on the meta-GGA-SCAN calculations, as shown in figure A2(d). As a result, when the SOC is included, no band inversion occurs, the band gap only reduces to 13 meV, and consequently the calculated ${{\mathbb{Z}}}_{2}$ invariant is 0, which demonstrates a destruction of the topological electronic properties by the intervalley scattering.

3.2. QAH states in Tc, Re, Ru, and Os adsorbed BC3 sheets

To break the TRS for seeking possible QAH state, the 3d–5d transition metal atoms are used to be adsorbed on BC3 sheet. By traversing all of the 3d–5d transition metal atoms on the (1 × 1), ($\sqrt{3}\times \sqrt{3}$), and (2 × 2) BC3 supercells, we find that the (2 × 2) BC3 with one adatom of technetium (Tc), rhenium (Re), or ruthenium (Ru) and the ($\sqrt{3}\times \sqrt{3}$) BC3 with one adatom of osmium (Os) are possible structures for realizing QAH effects. In these four adsorption structures, the transition metal adatoms are apt to be adsorbed on the hollow site of the C6 rings of BC3. The structural parameters and binding energies Eb for the four structures are listed in table 2, in which the cohesive energies Ec of the bulk counterparts of adatoms are also shown. Evidently, the Eb values are smaller than those of the Ec, although they are much higher than the Eb between Tl and BC3. To verify whether the adatoms tend to cluster or not, we use a (4 × 2) BC3 to adsorb two Tc, Re, or Ru atoms and a ($2\sqrt{3}\times \sqrt{3}$) BC3 to adsorb two Os atoms on the same side. Via calculating the total energies of the adsorption configurations with different adatom–adatom distances, we find that the transition metal adatoms tend to be adsorbed on BC3 discretely and thus the clustering of adatoms is effectively suppressed, which can be interpreted by the strong Coulomb repulsion between adatoms due to the electron transfer from adatoms to BC3 sheet. In addition, there is no imaginary frequency in the phonon dispersion spectra of these four adsorption structures, and thus these structures locate at the local minimums in the energy landscapes, as shown in figure A3 in the appendix.

Table 2.  The calculated structural parameters (lattice vectors a and adsorption height h), binding energies (Eb) between adatoms and BC3 sheet, cohesive energies (Ec) of adatoms, ratios between Eb and Ec (Eb/Ec), energy differences (ΔE) of ferromagnetic state relative to antiferromagnetic state, ferromagnetic moments (μ), energies (EMCA), nontrivial band gaps (Eg), and Chern numbers (C) for the (2 × 2) BC3 with one adatom of Tc, Re, or Ru and the ($\sqrt{3}\times \sqrt{3}$) BC3 with one adatom of Os.

  a h Eb Ec Eb/Ec Δ E μ EMCA Eg C
  (Å) (Å) (eV) (eV)   (meV) (μB) (meV) (meV)  
Tc-(2 × 2)BC3 10.34 1.22 3.73 6.94 0.54 −24 1 −1.1 38 1
Re-(2 × 2)BC3 10.35 1.21 2.72 7.83 0.35 −27 1 −5.8 50 1
Ru-(2 × 2)BC3 10.35 1.32 3.67 7.03 0.52 −70 2 2.9 47 −1
Os-($\sqrt{3}\times \sqrt{3}$)BC3 8.97 1.36 3.10 8.27 0.37 −132 2 9.8 70 −2

The ground states of the four stable adsorption structure are found to be ferromagnetic with the magnetic moments of 1 μB for the (2 × 2) BC3 with one adatom of Tc or Re and 2 μB for the (2 × 2) BC3 with one adatom of Ru and the ($\sqrt{3}\times \sqrt{3}$) BC3 with one adatom of Os, which are about 24–132 meV lower than their corresponding antiferromagnetic states, as listed in table 2. For the (2 × 2) BC3 with one adatom of Tc or Re, the GGA-PBE band structures excluding SOC for the ferromagnetic states are plotted in the left panels in figure 4. Owing to internal magnetization, the majority-spin (red line) and minority-spin (blue line) bands are split away from each other, and thus only the majority-spin Dirac cone bands are left around the Fermi level, giving rise to the formation of the half semimetals. Similar minority-spin Dirac cone bands are about 0.3 eV above the Fermi level. The spin densities (${\rho }_{\uparrow }-{\rho }_{\downarrow }$) shown in the insets exhibit that the ferromagnetic moments are mainly distributed around the adatoms. The atomic orbital projections on the bands demonstrate that a large part of the Dirac cone states around the Fermi level are contributed by the d orbital electrons of the adatoms, implying strong SOC in these adsorption systems. Therefore, when the SOC is included, the large nontrivial band gap of about 38 (58) meV is opened at the K point for the (2 × 2) BC3 with one adatom of Tc (Re), as shown in the right panels in figure 4. In addition, for the (2 × 2) BC3 adsorbed with one Re, due to the drastic up-move of conduction band at the K point, the conduction band minimum shifts to the M point, which results in an indirect band gap of about 50 meV in this system, as shown in the right panel in figure 4(b).

Figure 4.

Figure 4. The band structures excluding SOC (left) and including SOC (right) for the (2 × 2) BC3 with one adatom of Tc (a) or Re (b). In the left panels, the fatness of the red and blue colors represents the d orbital projection of the transition metal adatoms on the majority-spin ($\uparrow $) and minority-spin ($\downarrow $) bands, respectively, the insets exhibit the spin density (${\rho }_{\uparrow }-{\rho }_{\downarrow }$) with the isosurface value of 0.02 e3. In the right panels, the Berry curvatures (in au) for the whole valence bands along high symmetry lines are shown by the green solid circle lines.

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The GGA-PBE band structures excluding SOC and including SOC for the (2 × 2) BC3 with one adatom of Ru and the ($\sqrt{3}\times \sqrt{3}$) BC3 with one adatom of Os are plotted in figures 5(a) and (b), respectively. Different from the bands of the (2 × 2) BC3 adsorbed with one Tc or Re, the Dirac cone states at the K point in the band excluding SOC for the (2 × 2) BC3 with one adatom of Ru are far away from Fermi level. However, a majority-spin semimetal state at the Γ point is present around the Fermi level, which is mainly provided by the d orbital electrons of the Ru adatom. Thus, when the SOC is included, a nontrivial band gap of about 47 meV is opened in this system, as shown in the right panel in figure 5(a). For the ($\sqrt{3}\times \sqrt{3}$) BC3 adsorbed with one Os, a majority-spin degeneracy point exists at the K point nearby 7 meV below Fermi level in the band excluding SOC based on the GGA-PBE results. Meanwhile, the valence band along the MK line and the conduction band around the K point are both crossed some by Fermi level, which makes the system be an ordinary halfmetal. Fortunately, because of the strong SOC of Os adatom, the band structure including SOC gives an insulating state with the conduction band minimum at the M point, the valence band maximum at the middle point of the MK line, and a nontrivial gap of about 70 meV, as shown in the right panel in figure 5(b).

Figure 5.

Figure 5. Same as figure 4 but for the (2 × 2) BC3 adsorbed with one Ru (a) and the ($\sqrt{3}\times \sqrt{3}$) BC3 adsorbed with one Os (b), respectively.

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To identify the topological properties of the SOC induced insulating states, we calculate the Berry curvatures and Chern numbers for the four stable adsorption structures. The Berry curvatures Ω(k) are calculated using the Kubo formula [55, 56]

Equation (1)

where the summation is over all occupied states, εnk and ψnk are the eigenvalue and Bloch function of band n at wave vector k, fn is the Fermi–Dirac distribution function of band n, and vx and vy are the velocity operators. Through the gauge transfer between Bloch functions and real space Wannier functions, the Berry curvatures Ω(k) are computed directly from the formula (32) of [57]. Via integration of the Ω(k) over the first BZ, the Chern numbers (C) and anomalous Hall conductivities (σxy) are calculated by the formulas $C=\tfrac{1}{2\pi }{\int }_{{\rm{BZ}}}{{\rm{d}}}^{2}k{\rm{\Omega }}$ and ${\sigma }_{{xy}}=C\tfrac{{e}^{2}}{h}$.

The GGA-PBE results of Berry curvatures Ω(k) (in au) for the whole valence bands along high symmetry lines for the (2 × 2) BC3 with one adatom of Tc, Re, or Ru and the ($\sqrt{3}\times \sqrt{3}$) BC3 with one adatom of Os are plotted by the green solid circle lines in figures 4 and 5, which exhibits that the most nonzero Berry curvatures Ω(k) only occur nearby the SOC induced nontrivial gaps. The corresponding distributions of the Ω(k) in the momentum spaces are shown in the left panels in figure 6. For the (2 × 2) BC3 adsorbed with one Tc or Re, the nonzero Ω(k) are localized around the K and K' points with the same sign, while the nonzero Ω(k) for the (2 × 2) BC3 adsorbed with one Ru are located around the Γ point, as shown in the left panels in figures 6(a)–(c). For the ($\sqrt{3}\times \sqrt{3}$) BC3 adsorbed with one Os, there exists conspicuous distribution of Ω(k) around the whole KK' line with the maximum value nearby the K and K' points based on the GGA-PBE calculations, as shown in the left panel in figure 6(d). By integrating the Ω(k) over the first BZ, the anomalous Hall conductivities σxy as a function of the energy around the Fermi level are obtained for the four adsorption structures, as shown in the right panels in figure 6. One can find that the quantized Hall conductance platforms appear around the Fermi level and the widths of the platforms for the four adsorption structures accord completely with their global band gaps obtained from the GGA-PBE first-principles calculations. The Chern number of all occupied bands for the (2 × 2) BC3 with one adatom of Tc or Re is the integer value of 1, and the Chern numbers for the (2 × 2) BC3 with one adatom of Ru and the ($\sqrt{3}\times \sqrt{3}$) BC3 with one adatom of Os are −1 and −2, respectively, as listed in table 2. These nonzero Chern numbers indicate that the four adsorption structures are topologically nontrivial and thus two chiral edge channels appear on each side of their samples. In addition, for further verification of the topological properties, the SCAN functional of meta-GGA is also used to recalculate the band structures and Chern numbers of the four adsorption structures. The meta-GGA-SCAN calculations provide the same topological properties as those of the GGA-PBE results for the three adsorption structures of the (2 × 2) BC3 with one adatom of Tc, Re, or Ru, as shown in figures A4(a)–(c) in the appendix. But, for the ($\sqrt{3}\times \sqrt{3}$) BC3 with one adatom of Os, the band structure excluding SOC have a band gap of 268 meV around the Fermi level based on the meta-GGA-SCAN results, which is in sharp contrast to the halfmetal state obtained from the GGA-PBE calculations, as shown in figure A4(d). Thus, when the SOC is included, there is no band inversion occurring, the band gap only becomes 172 meV, and consequently the calculated Chern number is 0, which can also be explained by the strong intervalley scattering in the ($\sqrt{3}\times \sqrt{3}$) BC3 supercell. These results means that the realization of the robust QAH effects are only feasible in the systems of the (2 × 2) BC3 with one adatom of Tc, Re, or Ru.

Figure 6.

Figure 6. The distribution of Berry curvature in momentum space (left) and the anomalous Hall conductivity σxy around Fermi level (right) for the (2 × 2) BC3 adsorbed with one Tc (a), Re (b), or Ru (c), and the ($\sqrt{3}\times \sqrt{3}$) BC3 adsorbed with one Os (d).

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In order to confirm the easy magnetization orientation, we also calculate the magnetocrystalline anisotropy of the four adsorption structures, which is the total energy difference between two magnetic states where the magnetization is aligned along the [100] or [001] direction, i.e., ${E}_{{\rm{MCA}}}={E}_{[100]}-{E}_{[001]}$. Our calculations indicate that the energy of the out-of-plane spin orientation for the (2 × 2) BC3 adsorbed with one Tc or Re is about 1.1 or 5.8 meV lower than that of the in-plane spin orientation, while the ground states of the (2 × 2) BC3 with one Ru adatom and the ($\sqrt{3}\times \sqrt{3}$) BC3 with one Os adatom have the in-plane spin orientations, as listed in table 2. Thus, the (2 × 2) BC3 adsorbed with one Tc or Re are the suitable systems to observe the QAH states in experiments. Furthermore, due to the existence of the largest ratio of Eb/Ec in the four adsorption structures, the (2 × 2) BC3 adsorbed with one Tc is the best system to realize the QAH effect. In addition, it is known that the QAH effects can be effectively manipulated through changing of the easy magnetization axis by external electric fields [22]. For the (2× 2) BC3 adsorbed with one Ru, a suitable external electric field is suggested to tune the QAH effects for possible experimental observation.

4. Conclusion

In summary, we have used first-principles calculations combined with Wannier functions-based TB modeling to compute the topological electronic properties of graphenelike BC3 based systems. We discover that the Tl decorated BC3 systems with the same stoichiometry of BC3Tl have three low-energy structures that are confirmed to be robust 2D TIs with the nontrivial band gaps exceeding 200 meV, which promises room-temperature dissipationless QSH states. In addition, these topological BC3Tl structures are verified by the ab initio evolutionary algorithm to be more stable than other 2D BC3Tl allotropes, implying that these structures may be synthesized directly on a suitable substrate in an epitaxial way. By traversing all of the 3d–5d transition metal atoms on different BC3 supercells, we reveal that the (2 × 2) BC3 adsorbed with one Tc, Re, or Ru are robust CIs with ferromagnetic ground states, nontrivial band gaps larger than 38 meV, and nonzero Chern numbers. The (2 × 2) BC3 adsorbed with one adatom Tc or Re are the suitable systems for observing the QAH effects experimentally because in these systems the energy of the out-of-plane spin orientation is lower than that of the in-plane spin orientation. For the (2 × 2) BC3 adsorbed with one Ru, a suitable external electric field is suggested for possible experimental observation. These results demonstrate that the systems of graphenelike BC3 with suitable decoration of adatoms are good platforms for realizing QSH and QAH states.

Acknowledgments

This research was supported by the Natural Science Foundation of Shandong Province for Doctoral Program under Grant No. ZR2017BA017, the National Natural Science Foundation of China under Grant Nos. 11704322, 11774396, and 11774195, and the National Key Research and Development Program of China under Grant Nos. 2016YFA0300902 and 2016YFB0700102.

Appendix

To check the local stabilities of the four low-energy BC3Tl allotropes shown in figures 2(a)–(d), we calculate their phonon dispersion relations via the finite-difference approach. The required harmonic interatomic force constants for the C222@(1 × 1), Pmna@($1\times \sqrt{3}$), Pma2@($1\times \sqrt{3}$), and P-3m1@($\sqrt{3}\times \sqrt{3}$) BC3Tl structures are generated within the (3 × 3), (3 × 2), (3 × 2), and (2 × 2) supercells with respect to their unit cells. The calculated phonon spectra are plotted in figure A1, in which the absence of imaginary frequency demonstrates the local stability, hinting that all of these four structures locate their local minimums in the energy landscapes.

Figure A1.

Figure A1. The phonon dispersions for the (a) C222@(1 × 1), (b) Pmna@($1\times \sqrt{3}$), (c) Pma2@($1\times \sqrt{3}$), and (d) P-3m1@($\sqrt{3}\times \sqrt{3}$) BC3Tl structures.

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The meta-GGA-SCAN results of the band structures excluding and including SOC for the C222@(1 × 1), Pmna@($1\times \sqrt{3}$), Pma2@($1\times \sqrt{3}$), and P-3m1@($\sqrt{3}\times \sqrt{3}$) BC3Tl structures are plotted in figure A2. For comparison, the GGA-PBE results are also plotted. For the C222@(1 × 1), Pmna@($1\times \sqrt{3}$), and Pma2@($1\times \sqrt{3}$) structures, the meta-GGA-SCAN calculations have no essential difference with the GGA-PBE results, and the SOC induced gaps opened are almost unchanged, as shown in figures A2(a)–(c). Meanwhile, the calculated ${{\mathbb{Z}}}_{2}$ invariants via the meta-GGA-SCAN functional for the three structures are all +1, same as the GGA-PBE results. However, for the P-3m1@($\sqrt{3}\times \sqrt{3}$) structure, there is a band gap of about 39 meV around the Fermi level in the band structure excluding SOC based on the GGA-PBE calculations, which is in contrast to the accidental degeneracy induced semimetal state obtained from the GGA-PBE calculations, as shown in the insets in figure A2(d). When the SOC is included, the band gap only reduces to about 13 meV, and no band inversion occurs. As a results, the calculated ${{\mathbb{Z}}}_{2}$ invariants from the meta-GGA-SCAN functional for this structure is 0, which is interpreted by the strong intervalley scattering that can destroy the topological properties of the adsorption systems within ($3n\times 3n$) and ($\sqrt{3}n\times \sqrt{3}n$) supercells [52].

Figure A2.

Figure A2. The GGA-PBE (blue line) and meta-GGA-SCAN (red line) results of the band structures excluding SOC (left) and including SOC (right) for the (a) C222@(1 × 1), (b) Pmna@($1\times \sqrt{3}$), (c) Pma2@($1\times \sqrt{3}$), and (d) P-3m1@($\sqrt{3}\times \sqrt{3}$) BC3Tl structures. The insets in (d) show the zoomed-in bands around the Γ point.

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In order to verify the local stabilities of the (2 × 2) BC3 adsorbed with one Tc, Re, or Ru and the ($\sqrt{3}\times \sqrt{3}$) BC3 adsorbed with one Os, we also calculate corresponding phonon dispersion relations. The required harmonic interatomic force constants for the four adsorption systems are all generated within the (2 × 2) supercells relative to their unit cells, that is, the supercells with the (4 × 4) and ($2\sqrt{3}\times 2\sqrt{3}$) BC3. The calculated phonon spectra are plotted in figure A3, in which the absence of imaginary frequency verifies the local stability.

Figure A3.

Figure A3. The phonon dispersions for the (2 × 2) BC3 with one adatom of Tc (a), Re (b), or Ru (c) and the ($\sqrt{3}\times \sqrt{3}$) BC3 with one adatom of Os (d).

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The meta-GGA-SCAN results of the band structures excluding and including SOC for the (2 × 2) BC3 with one adatom of Tc, Re, or Ru and the ($\sqrt{3}\times \sqrt{3}$) BC3 with one adatom of Os are plotted in figure A4. The GGA-PBE results are also plotted for comparison. For the three structures of the (2 × 2) BC3 with one adatom of Tc, Re, or Ru, the meta-GGA-SCAN calculations indicate similar band structures to the GGA-PBE results, as shown in figures A4(a)–(c). At the same time, the calculated Chern numbers by the meta-GGA-SCAN functional are also same as the GGA-PBE calculations. But, for the ($\sqrt{3}\times \sqrt{3}$) BC3 adsorbed with one Os, a band gap of about 268 meV around the Fermi level is obtained in the band structure excluding SOC based on the GGA-PBE calculations, in sharp contrast to the halfmetal state obtained from the GGA-PBE calculations, as shown in the insets in figure A4(d). When the SOC is included, the band gap only reduces to 172 meV, and no band inversion occurs. Thus, the calculated Chern number becomes 0, which can be also explained by the strong intervalley scattering in the ($\sqrt{3}\times \sqrt{3}$) BC3 supercell.

Figure A4.

Figure A4. The GGA-PBE (transparent line) and meta-GGA-SCAN (full line) results of the band structures excluding SOC (left) and including SOC (right) for the (2 × 2) BC3 with one adatom of Tc (a), Re (b), or Ru (c) and the ($\sqrt{3}\times \sqrt{3}$) BC3 with one adatom of Os (d). In the left panels, the red and blue colors represent the majority and minority-spin bands, respectively.

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10.1088/1367-2630/aad357