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Positron annihilation with vacancies in thin surface layer of As heavily doped Si

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Published under licence by IOP Publishing Ltd
, , Citation Lu Zhi-heng et al 1993 Acta Phys. Sin. (Overseas Edn) 2 577 DOI 10.1088/1004-423X/2/8/003

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Author affiliations

1 Department of Physics, Beijing Normal University, Beijing 100875, China

2 Institut für Kern-Festkörperphysik, Bundeswehr Universität, Germany

Dates

  1. Received 30 June 1992
1004-423X/2/8/577

Abstract

The lifetime spectroscopy of slow positron accelerated with linear accelerator and pulse punch system was first used to analyze the vacancies in the thin surface layer of silicon heavily doped with arsenic. The results demonstrated that no monovacancy was detected to support the arsenic-vacancy complex models for explaining the electrical deactivation mechanism of arsenic-heavily-doped silicon.

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