Abstract
In this paper, the electrical resistivity of liquid Ga1-xSbx has been carefully measured as a function of temperature and concentration. For liquid Ga1-xSbx, the electrical resistivity versus temperature is linear for all concentrations for which measurements were made except x = 1 and 0.5, where the temperature coefficient of the resistivity increases with the increase of temperature near each melting point, but is independent of temperature above certain temperatures. It is very interesting that the electronic transport properties of liquid Ga-Sb are very different from those of liquid In-Sb, although they both belong to the liquid III-V system. The results obtained in this work have also been discussed on the basis of a `two-structure' model.
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