Abstract
We report comprehensive photoluminescence, Raman scattering and photoluminescence excitation data on GaN layers grown by MBE on GaAs and GaP substrates. The main photoluminescence feature of GaN layers corresponds to the recombination of free carriers from conduction and valence bands. It is supported by both photoluminescence and photoluminescence excitation spectroscopic data. The origin of impurity-assisted photoluminescence is discussed. We also report the Raman spectra on cubic GaN films.
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