product and detectivity in a GaInAsSb infrared photovoltaic detectorAbstract
In this paper a theoretical analysis of the 
product and the detectivity in a GaInAsSb infrared photovoltaic detector is reported, dependent on the four fundamental kinds of noise mechanism and the quantum efficiency. The considerations are carried out for near room temperature and 
m wavelength. The analytical results show that the noise mechanisms can be reduced, and correspondingly the performance of such detectors can be improved.
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