Etching of Si(111) by SF₆ plasma in a triode RF (13.56 MHz) multipolar reactor

The authors present some results concerning the characterization of an etching triode reactor with a multipolar confinement, excited at 13.56 MHz. Two generators were used, one for creating the discharge and the other for biasing the used sample. This reactor makes the energy of the ions independent of the plasma creation function. They have studied the effect of ion energy and discharge parameters, (flow rate and incident power) on etching kinetics, anisotropy and contaminations of Si(111) samples exposed to SF₆ plasma.