Transport properties of C60 thin film FETs with a channel of several-hundred nanometers

Yukitaka Matsuoka; Nobuhito Inami; Eiji Shikoh; Akihiko Fujiwara

doi:10.1016/j.stam.2005.01.005

Science and Technology of Advanced Materials

Transport properties of C₆₀ thin film FETs with a channel of several-hundred nanometers

Yukitaka Matsuoka^1,2, Nobuhito Inami^1,2, Eiji Shikoh^1,2 and Akihiko Fujiwara^1,2

© 2005 Elsevier Ltd
Science and Technology of Advanced Materials, Volume 6, Number 5 Citation Yukitaka Matsuoka et al 2005 Sci. Technol. Adv. Mater. 6 427 DOI 10.1016/j.stam.2005.01.005

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¹ School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan

² CREST, Japan Science and Technology Corporation, 4-1-8 Honchou, Kawaguchi, Saitama 332-0012, Japan

³ Corresponding author. Address: School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan.

Dates

Received 31 October 2004
Accepted 24 January 2005

Abstract

We report the transport properties of C₆₀ thin film field-effect transistors (FETs) with a channel of several-hundred nanometers. Asymmetrical drain current I_D versus source-drain voltage V_DS characteristics were observed. This phenomenon could be explained in terms of the high contact-resistance between the C₆₀ thin film and the source/drain electrodes. This device showed a current on/off ratio >10⁵.

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