High-Power Blue-Violet Semipolar (20bar 2bar 1) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2

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Published 15 July 2011 • ©2011 The Japan Society of Applied Physics
, , Citation Yuji Zhao et al 2011 Appl. Phys. Express 4 082104 DOI 10.1143/APEX.4.082104

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1 Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

2 Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

3 Optoelectronic Laboratory, Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan

Dates

  1. Received 18 June 2011
  2. Accepted 30 June 2011
  3. Published

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Abstract

We report a high-power blue light-emitting diode (LED) with a high external quantum efficiency and low droop on a free-standing (20bar 2bar 1) GaN substrate. At a forward current of 20 mA, the LED showed a peak external quantum efficiency of 52% and an output power of 30.6 mW. In higher current density regions, the LED also showed outstanding performance, with droop ratios of 0.7% at 35 A/cm2, 4.3% at 50 A/cm2, 8.5% at 100 A/cm2, and 14.3% at 200 A/cm2. The output power and external quantum efficiency at 200 A/cm2 were 266.5 mW and 45.3%, respectively.

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10.1143/APEX.4.082104