S Bietti et al 2009 IOP Conf. Ser.: Mater. Sci. Eng. 6 012009 doi:10.1088/1757-899X/6/1/012009
S Bietti1, S Sanguinetti1, C Somaschini1, N Koguchi1, G Isella2, D Chrastina2 and A Fedorov2
Show affiliationsWe present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots.
Condensed matter: electrical, magnetic and optical
Issue 1 (2009)
S Bietti et al 2009 IOP Conf. Ser.: Mater. Sci. Eng. 6 012009
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