E P Pokatilov et al 2007 J. Phys.: Conf. Ser. 92 012050 doi:10.1088/1742-6596/92/1/012050
E P Pokatilov1,2, D L Nika1,2, N D Zincenco2 and A A Balandin1
Show affiliationsWe have shown theoretically that the electron mobility in wurtzite AlN/GaN/AlN heterostructures can be enhanced by compensating the built-in electric field with the externally applied perpendicular electric field and by introducing a shallow InxGa1-xN channel in the center of GaN potential well. It was found that two- to fivefold increase of the room temperature electron mobility can be achieved. The tuning of the electron mobility with the external electric field or InxGa1-xN channel can be useful for the design of GaN-based field-effect transistors and optoelectronic devices.
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Condensed matter: electrical, magnetic and optical
Issue 1 (2007)
E P Pokatilov et al 2007 J. Phys.: Conf. Ser. 92 012050
J Schulze et al 2009 J. Phys. D: Appl. Phys. 42 092005
N D Zincenco et al 2007 J. Phys.: Conf. Ser. 92 012086
E P Pokatilov et al 2007 J. Phys.: Conf. Ser. 92 012022
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