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Pressure evolution of electrical transport in the 3D topological insulator (Bi,Sb)2(Se,Te)3

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, , Citation J R Jeffries et al 2015 J. Phys.: Conf. Ser. 592 012124 DOI 10.1088/1742-6596/592/1/012124

1742-6596/592/1/012124

Abstract

The group V-VI compounds—like Bi2Se3, Sb2Te3, or Bi2Te3—have been widely studied in recent years for their bulk topological properties. The high-Z members of this series form with the same crystal structure, and are therefore amenable to isostructural substitution studies. It is possible to tune the Bi-Sb and Te-Se ratios such that the material exhibits insulating behavior, thus providing an excellent platform for understanding how a topological insulator evolves with applied pressure. We report our observations of the pressure-dependent electrical transport and crystal structure of a pseudobinary (Bi,Sb)2(Te,Se)3 compound. Similar to some of its sister compounds, the (Bi,Sb)2(Te,Se)3 pseudobinary compound undergoes multiple, pressure-induced phase transformations that result in metallization, the onset of a close-packed crystal structure, and the development of distinct superconducting phases.

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10.1088/1742-6596/592/1/012124