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Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method

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, , Citation D Ichida et al 2014 J. Phys.: Conf. Ser. 518 012002 DOI 10.1088/1742-6596/518/1/012002

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1 Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan

2 Jointing and Welding Reserch Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

3 Faculty of Arts and Science, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395,Japan

4 PRESTO Japan Science and Technology Agency, Gobancho, Chiyoda-ku, Tokyo, 102-0076, Japan

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1742-6596/518/1/012002

Abstract

We report here deposition of crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. The size of Ge nanoparticles is deduced to be 6.3-6.4 nm from the peak frequency shift of Raman spectra. Raman and X-ray diffraction spectra show that the films are crystalline. The film crystallinity strongly depends on substrate temperature (Ts). Highly crystalline Ge nanoparticle films are successfully fabricated at Ts = 180°C.

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10.1088/1742-6596/518/1/012002