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Fabrication and Electrical Characterizations of Field-Effect Transistors with a piece of C60 Nano-Whisker

K Ogawa1, T Kato1, A Ikegami1, H Tsuji1, N Aoki1,2, J P Bird3 and Y Ochiai1,2

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C60 nano-whiskers (C60 NWs) have been synthesized by a method of liquid-liquid interfacial precipitation using a system of C60-saturated m-xylene and isopropyl alcohol, and a C60 nano-whisker based field-effect transistor (C60 NW-FET) has been fabricated by a manipulator with use of a glass micro-capillary. The transport of the C60 NW-FET exhibits n-channel normally on properties and their carrier mobility is estimated to be 2.5 × 10−2 cm2/Vs in vacuum at room temperature.


PACS

85.30.Tv Field effect devices

81.07.-b Nanoscale materials and structures: fabrication and characterization

81.16.-c Methods of nanofabrication and processing

85.30.De Semiconductor-device characterization, design, and modeling

68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)

Subjects

Electronics and devices

Semiconductors

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 1 (2006)



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