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Establishment of equilibrium of electrostatic potential by photo-irradiation in a GaAs quantum well at low temperature

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, , Citation Masumi Yamaguchi et al 2010 J. Phys.: Conf. Ser. 210 012051 DOI 10.1088/1742-6596/210/1/012051

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1 NTT Basic Research Laboratories, NTT corp. 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

2 Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan

3 Present address: ESPCI, 7, rue Antoine Chantin 75014 Paris, France

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1742-6596/210/1/012051

Abstract

We measured photoluminescence (PL) spectra from a 20-nm GaAs/AlGaAs quantum well (QW) grown on an n-type substrate by selectively exciting the GaAs at 2 K. We observed a two-stage change of PL spectra as a function of the total amount of photo-irradiation (p × t) after cooling down. This corresponds to the process of establishing the equilibrium of electrostatic potential between the sample surface and QW and between the QW and n-doped substrate.

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10.1088/1742-6596/210/1/012051