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Highly charged ion beams from the Tokyo EBIT for applications to nano-science and -technology

Masahide Tona1 and Satoshi Takahashi2

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We report present status of a beam line for transportation of highly charged ions (HCIs) extracted from the Tokyo EBIT. We have produced continuous beams of 2.5 × 105 cps for Xe44+ through a 1 mm aperture. With slightly high energy operation (electron beam energy: 78 keV) of the Tokyo EBIT, we have also obtained 103 ions/pulse for Ta70+ HCIs extracted by a pulse mode (trapping time: 3 sec). We are going to apply such HCI beams to nano-processes on solid surfaces by utilizing some useful characteristics of the HCI-interactions. Future perspective of HCI-based nano-science and -technology is presented.


PACS

81.16.-c Methods of nanofabrication and processing

29.25.-t Particle sources and targets

68.47.Fg Semiconductor surfaces

Subjects

Accelerators, beams and electromagnetism

Semiconductors

Nuclear physics

Instrumentation and measurement

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Particle physics and field theory

Dates

Issue 1 (2004)



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