S Satake et al 2009 J. Phys.: Conf. Ser. 191 012012 doi:10.1088/1742-6596/191/1/012012
S Satake1, N Inoue1, S Yamashina1, M Shibahara2 and J Taniguchi1
Show affiliationsMolecular dynamics simulations of Ga ion collision on a Si surface using an optimized potential function were carried out for acceleration voltages of 1, 40, 100 keV for 36, 50, 100 Ga ions. A hillock structure was formed by the Ga ion impact. The height of the structure calculated by the simulations corresponded to experimental values. The sputtering yield was found to be proportional to the acceleration energy and for a high acceleration energy of 100 keV Si atoms deep within the impact surface were sputtered.
68.35.Gy Mechanical properties; surface strains
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
Condensed matter: electrical, magnetic and optical
Issue 1 (2009)
S Satake et al 2009 J. Phys.: Conf. Ser. 191 012012
Seung-Bok Choi et al 2009 Smart Mater. Struct. 18 125010
J D Alexander et al 2009 J. Phys. B: At. Mol. Opt. Phys. 42 141004
Songbai Chen and Jiliang Jing 2009 Class. Quantum Grav. 26 155006
S R Gocić et al 2009 J. Phys. D: Appl. Phys. 42 212001
Chris J Milne et al 2009 J. Phys.: Conf. Ser. 190 012052
Santanu Karan and Biswanath Mallik 2008 Nanotechnology 19 495202
A I Mares et al 2007 Nanotechnology 18 265403
Shamik Gupta et al 2009 J. Phys. A: Math. Theor. 42 485002
Bertrand Eynard and Nicolas Orantin 2009 J. Phys. A: Math. Theor. 42 293001