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Surface deformation of ion collision process via molecular dynamics simulation

S Satake1, N Inoue1, S Yamashina1, M Shibahara2 and J Taniguchi1

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Molecular dynamics simulations of Ga ion collision on a Si surface using an optimized potential function were carried out for acceleration voltages of 1, 40, 100 keV for 36, 50, 100 Ga ions. A hillock structure was formed by the Ga ion impact. The height of the structure calculated by the simulations corresponded to experimental values. The sputtering yield was found to be proportional to the acceleration energy and for a high acceleration energy of 100 keV Si atoms deep within the impact surface were sputtered.


PACS

68.35.Gy Mechanical properties; surface strains

81.40.Lm Deformation, plasticity, and creep

62.20.F- Deformation and plasticity

79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)

Subjects

Condensed matter: electrical, magnetic and optical

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 1 (2009)



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