S B Erenburg et al 2009 J. Phys.: Conf. Ser. 190 012131 doi:10.1088/1742-6596/190/1/012131
S B Erenburg1,4, S V Trubina1, N V Bausk1, A V Dvurechenskii2, A I Nikiforov2, V G Mansurov2, K S Zhuravlev2 and S G Nikitenko3
Show affiliationsWe investigate the microstructure of Ge/Si and GaN/AlN sandwiches containing vertically aligned QDs. The study establishes an influence of blocking layers (Si, AlN) thickness, number of QDs layers (Ge, GaN) in heterostructure and annealing temperature on the microstructure characteristics of systems with quantum dots.
78.70.Dm X-ray absorption spectra
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 1 (2009)
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