Journal of Physics: Conference Series
Volume 190
Number 1
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H Ofuchi et al 2009 J. Phys.: Conf. Ser. 190 012116 doi:10.1088/1742-6596/190/1/012116
Fluorescence XAFS study of local structures in high-k gate dielectrics HfSiON/SiON/Si annealed at various nitrogen gas partial pressure
H Ofuchi1, S Toyoda2,3,4, K Ikeda5, G L Liu5, Z Liu5 and M Oshima2,3,4
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Fluorescence XAFS study of local structures in high-k gate dielectrics HfSiON/SiON/Si annealed at various nitrogen gas partial pressure
H Ofuchi et al 2009 J. Phys.: Conf. Ser. 190 012116
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